Abstract: CMOS inverter is widely used devices in most of the electronic circuits as it offers significant noise margins in both states, and will operate over a vast range of source and input voltages (provided the source voltage is fixed) but they undergo some drawbacks such as propagation delay dependency on mobility, load capacitance and dimensions. This paper uses HEMT as an alternative for CMOS inverter. HEMT is a heterojunction device which offers high gain and low noise figure or power dissipation, switching speed is less which reduces propagation delay. Simulation of inverter using HEMT will be done in TCAD.We have simulated and comparedCMOS Inverter and Inverter using HEMT in AIM Spice and observed the enhanced parameters.
KeyWords: CMOS, Propagation delay, TCAD, HEMT.
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