Abstract: Cadmium sulfide (CdS) and Zinc sulfide (ZnS) n-type semiconductor thin films have been deposited on various substrates by Chemical Bath Deposition Technique (CBDT). All the films have been deposited at temperature 70±2ºC. The as-deposited films were characterized by X-ray diffractometer (X-PERT PRO) and scanning electron microscopy (SEM). The thicknesses of the film have been measured using weight difference method. It is observed that, the average grain size of CdS & ZnS film is in the range of 24nm to 65nm. The physical conditions were kept identical while growing all the samples. It is also observed that energy band structure and band gaps get changed because of the change in the grain size of the sample in the films. We predict that the difference in grain size of the CdS/ZnS in the thin films may be because of the binding energy of Cadmium and Zinc in the molecules of CdSO4 and Zn(CH3COO)2. The investigation of the effect of the method of synthesis on the grain size and the effect of grain size on the properties of semiconductor is under consideration.

Keywords: Cadmium sulfide, zinc sulfide, thin film, chemical bath

| DOI: 10.17148/IARJSET.2022.9208