Abstract: Indium antimonide In1-xSbx (x = 0.8, 0.5, 0.4) thin films have been grown on glass substrates by thermal evaporation method with vacuum pressure of 10-4 Torr at the temperature of 343 K. The V-I characteristics of the synthesized thin films have been studied. The resistivity, ρ versus temperature graph shows that In0.2Sb0.8 and In0.5Sb0.5 show the semiconducting behavior, while In0.6Sb0.4 shows the metallic behavior. The activation energy of these films is investigated by using ln ρ vs. 1000/T graph. It is exhibited that the hoping conduction takes place in low temperature region.

Key words: Thermal evaporation, Torr, Resistivity, Activation energy, Hoping conduction etc.

| DOI: 10.17148/IARJSET.2022.9497