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Investigation on the electrical behavior of In1-xSbx thin films for microelectronic application
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Abstract: Indium antimonide In1-xSbx (x = 0.8, 0.5, 0.4) thin films have been grown on glass substrates by thermal evaporation method with vacuum pressure of 10-4 Torr at the temperature of 343 K. The V-I characteristics of the synthesized thin films have been studied. The resistivity, ρ versus temperature graph shows that In0.2Sb0.8 and In0.5Sb0.5 show the semiconducting behavior, while In0.6Sb0.4 shows the metallic behavior. The activation energy of these films is investigated by using ln ρ vs. 1000/T graph. It is exhibited that the hoping conduction takes place in low temperature region.
Keywords: Thermal evaporation, Torr, Resistivity, Activation energy, Hoping conduction etc.
Keywords: Thermal evaporation, Torr, Resistivity, Activation energy, Hoping conduction etc.
How to Cite:
[1] Deepti Saxena, Mahendra Kumar* and Sachin Kumar Sharma, “Investigation on the electrical behavior of In1-xSbx thin films for microelectronic application,” International Advanced Research Journal in Science, Engineering and Technology (IARJSET), DOI: 10.17148/IARJSET.2022.9497
This work is licensed under a Creative Commons Attribution 4.0 International License.