Performance Evaluation of Differential 2T-2MTJ Memory Configurations Based on Diverse Magnetic Tunnel Junction Models

Abstract: Traditional volatile memories like SRAM and DRAM face scaling limits. These memories have high leakage power and volatility issues. Spin-Transfer Torque Magnetic Random-Access Memory (STT-MRAM) is a strong non- volatile alternative. This paper presents a comparative analysis of three Magnetic Tunnel Junction (MTJ) models. These models include Perpendicular MTJ (PMA), Shape-PMA (s-PMA), and Double-Barrier MTJ (DMTJ).

Simulation results show that the Double-Barrier MTJ (DMTJ) is the best device. It has a fast switching delay of 2.20 ns. It also uses a low switching current of 3.68 μA. Based on these results, this paper implements a differential 2T-2DMTJ cell architecture. The proposed design uses differential sensing for high reliability. The 2T-2DMTJ cell shows strong performance. The simulation results for the 2T-2DMTJ architecture demonstrate an average write power of 13.47 μW and an exceptionally low read power of 3.85 nW, while maintaining a standby power of 439.24 pW. It achieves a write delay of 1.085 ns and a read delay of 12.66 ps.

Keywords: STT-MRAM, Magnetic Tunnel Junction (MTJ), Double-Barrier MTJ (DMTJ), 2T-2MTJ Cell, Non-Volatile Memory, Spintronics.