Abstract: In this research paper, we have investigated the dependence of temperature and high intensity illumination on the photoconductive materials by using the properties of recombination rates, carrier generation rate and carrier concentration. This photoconductive materials shows the nonlinear effect in our studies. Nonlinear photoconductivity represents a vital area of study in material science, with significant implications for the development of advanced optoelectronic devices. This research explores the complex phenomena of nonlinear photoconductivity in various materials when exposed to high-intensity illumination. Unlike linear photoconductivity, where the conductivity increases proportionally with light intensity, nonlinear photoconductivity involves intricate mechanisms such as carrier trapping, defect state saturation, and multiphoton absorption, leading to non-proportional responses in the material's conductivity. This study focuses on the experimental characterization and theoretical modeling of these nonlinear effects in selected semiconductor and organic materials. The findings reveal how high-intensity illumination can induce significant deviations from linear behaviour, including sublinear and superlinear conductivity responses, and even negative photoconductivity under certain conditions. The results not only enhance our understanding of light-matter interactions in non-linear regimes but also provide valuable insights for optimizing materials for practical applications in photodetectors, solar cells, and other optoelectronic devices that operate under varying light conditions.

Keywords: Photoconductivity, optoelectronic devices, high-intensity illumination, multiphoton absorption.

| DOI: 10.17148/IARJSET.2024.11838